Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds von Korsunskaya, N. E., Markevich, I. V., Dzhumaev, B. R., Borkovskaya, L. V., Sheinkman, M. K.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing von Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals von Bogoboyashchiy, V.V.

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Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films von Mamikonova, V.M., Kasimov, F.D., Kemerchev, G.P.

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Investigation of structural perfection of SiC ingots grown by a sublimation method von Avramenko, S.F., Kiselev, V.S., Valakh, M.Ya., Visotski, V.G.

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Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry von Ammerlaan, C.A.J.

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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals von Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

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Економічні та соціальні проблеми розвитку пенсійної системи України (на прикладі м. Києва) von Вернигора, Н.Ф.

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Determination of surface parameters of solids by methods of X-ray total external reflection von Balovsyak, S.V., Fodchuk, I.M., Lytvyn, P.M.

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Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As von Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.

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High-resistance low-doped GaAs and AlGaAs layers obtained by LPE von Krukovsky, S.I., Zayachuk, D.M., Rybak, O.V., Mryhin, I.O.

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Electron emission modulation effects in micro-size structures von Hartnagel, H.

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Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition von Andriyevsky, B.V., Romanyuk, M.O., Dumka, Yu.A.

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Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide von Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.

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Iodine-stabilized He-Ne laser pumped by transverse rf-discharge von Boyko, O.V., Negriyko, A.M., Yatsenko, L.P.

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Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals von Elizarov, A.I., Kurbanov, K.R., Bogoboyashchyy, V.V.

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Смертність від вбивств в Україні: соціальна нерівність винуватців і жертв злочинів von Левчук, Н.М.

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Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material von Zabello, E., Syaber, V., Khizhnyak, A.

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Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique von Serdega, B.K., Venger, Ye.F., Nikitenko, Ye.V.

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The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors von Kamuz, A.M., Oleksenko, P.Ph., Kamuz, O.A., Kamuz, V.G.

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