Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

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Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ von Kondrat, O., Popovich, N., Dovgoshej, N.

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Nucleation, growth and transformation of microdefects in FZ-Si von Talanin, V.I., Talanin, I.E.

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The simple approach to determination of active diffused phosphorus density in silicon von Sasani, M.

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Investigation of β-CdP₂ crystals by laser spectroscopy methods von Patskun, I.I., Slipukhina, I.A.

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Electrodynamic linear response of a superconductor film located at the surface of semiconductor von Lozovski, V., Reznik, D.

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Ferromagnetism induced in diluted A₁₋xMnxB semiconductors von Bryksa, V.P., Tarasov, G.G., Masselink, W.T., Nolting, W., Mazur, Yu.I., Salamo, G.J.

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Individual glow bands of Mn²⁺ ions photoluminescence in plastically deformed ZnS single crystals von Prokofiev, T.A., Kovalenko, A.V., Polezaev, B.A., Bulanyi, M.F., Gorban, A.A., Hmelenko, O.V.

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

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Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs von Slutskii, M.I.

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On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses von Shpotyuk, O.I., Vakiv, M.M., Butkiewicz, B., Kovalskiy, A.P., Golovchak, R.Ya.

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Local properties of impurity and defects investigated by high pressure spectroscopy von Grinberg, Marek

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Information conception of image perception at solid-state lighting von Osinsky, V.I.

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Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region von Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

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Optical investigation of the electronic structure of alloys Сu-Fе von Vovchenko, V.V., Staschuk, V.S., Poperenko, L.V., Lysiuk, V.O.

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Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System von Moskvin, P.P., Rashkovetsky, L.V., Khodakovsky, V.V.

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Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers von Red’ko, R., Red’ko, S.

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Compensation of hole conductivity in CdTe crystals doped with Cr von Nikonyuk, E.S., Zakharuk, Z.I., Kuchma, M.I., Kovalets, M.O., Rarenko, A.I., Yuriychuk, I.M.

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Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation von Moscal, D.S., Fedorenko, L.L., Yusupov, M.M., Golodenko, M.M.

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Dielectric characteristics of GaSe nanocrystals intercalated with hydrogen von Kaminskii, V.I., Kovalyuk, Z.D., Netyaga, V.V., Boledzyuk, V.B.

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