Current-field diagram of magnetic states of a surface spin valve in a point contact with a single ferromagnetic film von Yanson, I.K., Balkashin, O.P., Fisun, V.V., Yanson, Yu.I., Naidyuk, Yu.G.

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Theory of relaxation for spontaneous emission of Bloch oscillation radiation von Sokolov, V.N., Iafrate, G.J.

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Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge von Dmitruk, N.L., Borkovskaya, O.Yu., Havrylenko, T.S., Naumenko, D.O., Petrik, P., Meza-Laguna, V., Basiuk, E.V.

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Wavelet analysis for polarization maps of networks formed by liquid biological crystals in blood plasma: statistical and fractal approaches von Bachinsky, V.T., Ushenko, Yu.O., Tomka, Yu.Ya., Dubolazov, O.V., Balanets’ka, V.O., Karachevtsev, A.V.

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Mechanisms of carrier transport in CdTe polycrystalline films von Sukach, A.V., Tetyorkin, V.V., Krolevec, N.M.

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Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry von Fodchuk, І.М., Dovganyuk, V.V., Litvinchuk, Т.V., Kladko, V.P., Slobodian, М.V., Gudymenko, O.Yo., Swiatek, Z.

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Impurity scattering of band carriers von Boiko, I.I.

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Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields von Taqi, A., Diouri, J.

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Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type von Gaidar, G.P.

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New directions in point-contact spectroscopy based on scanning tunneling microscopy techniques (Review Article) von Tartaglini, E., Verhagen, T.G.A., Galli, F., Trouwborst, M.L., Müller, R., Shiota, T., Aarts, J., van Ruitenbeek, J.M.

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Peculiarities of valence band formation in As-Ge-Se semiconductor glasses von Vakiv, M., Golovchak, R., Chalyy, D., Shpotyuk, M., Ubizskii, S., Shpotyuk, O.

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Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions von Rosul, R.R., Guranich, P.P., Gomonnai, O.O., Slivka, A.G., Rigan, M.Yu., Rubish, V.M., Guranich, O.G., Gomonnai, A.V.

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A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs von Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.

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Wigner function description of a qubit-oscillator system von Allen, J., Zagoskin, A.M.

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Macroscopic quantum tunneling and retrapping processes in moderately damped YBaCuO Josephson junctions von Massarotti, D., Longobardi, L., Galletti, L., Stornaiuolo, D., Rotoli, G., Tafuri, F.

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Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe von Kovalyuk, Z.D., Duplavyy, V.Y., Sydor, O.M.

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Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S von Borschak, V.A., Brytavskyi, Ie.V., Smyntyna, V.A., Lepikh, Ya.I., Balaban, A.P., Zatovskaya, N.P.

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Cathodic corrosion: Part 1. Mechanism of corrosion via formation of metal anions in aqueous medium von Yanson, Yu.I., Yanson, A.I.

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Cathodic corrosion: Part 2. Properties of nanoparticles synthesized by cathodic corrosion von Yanson, A.I., Yanson, Yu.I.

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Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements von Gomeniuk, Yu.V.

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