Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures von Gorishny, M.P., Verbitsky, A.B., Kovalchuk, A.V., Kovalchuk, T.N., Lutsyk, P.N.

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Improvement of sensor response reproducibility and multistage recognition approach for samples with dominant components von Kruglenko, I.V.

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Optical-electronic sensor of spacecraft heat protection ablation von Hornostaev, G.

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Development of a KDP crystal growth system based on TRM and characterization of the grown crystals von Javidi, S., Faripour, H., Esmaeil Nia, M., Sepehri, K.F., Ali Akbari, N.

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Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure von Kurbatov, D., Opanasyuk, A., Denisenko, V., Kramchenkov, A., Zaharets, M.

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Проблема індивідуальної та колективної безпеки у творчості Томаса Гоббса та Імануїла Канта (філософсько-правовий аспект)... von Дзьобань, О.П., Размєтаєва, Ю.С.

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Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers von Osinniy, V., Dybko, K., Jedrzejczak, A., Arciszewska, M., Dobrowolski, W., Story, T., Radchenko, M.V., Sichkovskiy, V.I., Lashkarev, G.V., Olsthoorn, S.M., Sadowski, J.

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NATO Advanced Research Workshop “Dimensionality effects and non-linearity in ferroics”

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Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals von Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.

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TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment von Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Lytvyn, O.S., Prokopenko, I.V., Ivanov, V.N.

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Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique von Volodin, N.M., Zavyalova, L.V., Kirillov, A.I., Svechnikov, S.V., Prokopenko, I.V., Khanova, A.V.

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Varistor-like current-voltage characteristic of porous silicon von Vakulenko, O.V., Kondratenko, S.V., Shutov, B.M.

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Semiconductor sensors for dosimetry of epithermal neutrons von Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.

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Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix von Khatsevich, I., Melnik, V., Popov, V., Romanyuk, B., Fedulov, V.

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Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon von Hasanov, H.A., Murguzov, M.I.

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Свобода як всезагальний принцип права von Донченко, О.П.

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Raman threshold and optical gain bandwidth in silica fibers von Felinskyi, G.S., Korotkov, P.A.

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The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment von Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.

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Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.

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Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells von Lokot, L.O.

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