Two-dimensional photonic crystals as perspective materials of modern nanoelectronics von Karachevtseva, L.A.

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Вірусні гепатити і рак печінки М.А. Андрейчин, В.І. Дрижак, О.В. Рябоконь, В.С. Копча (2010) ТДМУ: Укрмедкнига.... von Білинський, Б.Т.

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Spectra of the photo-electric phenomena physically differentiated on the light absorption factor von Berezhinsky, L.I., Venger, E.F., Matyash, I.E., Serdega, B.K.

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Recording the high efficient diffraction gratings by using He-Cd laser von Kostyukevych, S.A., Morozovska, A.N., Minko, V.I., Shepeliavyi, P.E., Kudryavtsev, A.A., Rubish, V.M., Rubish, V.V., Tverdokhleb, I.V., Kostiukevych, A.S., Dyrda, S.V.

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Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors von Baranskii, P.I., Babich, V.M., Venger, E.F.

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Crystallochemistry of defects in lead telluride films von Freik, D.M., Ruvinskii, M.A., Ruvinskii, B.M., Galushchak, M.A.

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Effect of surface condition on strain in semiconductor crystal sample von Serdega, B.K., Nikitenko, E.V., Prikhodenko, V.I.

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Electronic properties of silicon surface at different oxide film conditions von Kirillova, S.I., Primachenko, V.E., Venger, E.F., Chernobai, V.A.

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Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films von Nesterenko, B.O., Kazantseva, Z.I., Stadnyk, O.A., De Rossi, D., Kalchenko, V.I.

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Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well von Korovin, A.V.

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Activation of porous Si blue emission due to preanodization ion implantation von Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.

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Требования к авторам

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Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes von Vlasenko, N.A., Kononets, Ya.F., Denisova, Z.L., Kopytko, Yu.V., Veligura, L.I., Soininen, El., Tornqvist, R.O., Vasama, K.M.

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Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters von Snopok, B.A., Kostyukevich, K.V., Lysenko, S.I., Lytvyn, P.M., Lytvyn, O.S., Mamykin, S.V., Zynyo, S.A., Shepelyavyj, P.E., Kostyukevich, S.A., Shirshov, Yu.M., Venger, E.F.

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Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices von Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

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Structural investigations of annealed ZnS:Cu, Ga film phosphors von Lytvyn, O.S., Khomchenko, V.S., Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Prokopenko, I.V., Rodionov, V.Ye., Tzyrkunov, Yu.A.

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Features of electrical charge transfer in porous silicon von Monastyrskii, L.S.

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Author Index 2009

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Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs von Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.

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Author Index 2010

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