Borophosphosilicate glass component analysis using secondary neutral mass spectrometry von Oberemok, O., Lytvyn, P.

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Multilevel computer-generated holograms for reconstructing 3-D images in combined optical-digital security devices von Girnyk, V.I., Kostyukevych, S.O., Shepeliavyi, P.Ye., Kononov, A.V., Borisov, I.S.

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Allowable deviation of LC layer thickness in cholesteric LCDs von Rybalochka, A., Sorokin, V., Sorokin, A.

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Static realization of reliable positional indication von Bushma, A.V., Sukach, G.A.

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On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior von Vlasenko, N.A., Denisova, Z.L., Kononets, Ya.F., Veligura, L.I., Chumachkova, M.M., Tsyrkunov, Yu.A., Soininen, E.L., Tornqvist, R.O., Vasame, K.M.

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PEPC sensitization with polymethine dyes: 1. Squarylium dyes of indole row as efficient sensitizers for red region of optical spectrum von Bazhenov, M.Yu., Golod, P.I., Grabovskyy, V.V., Kurdyukov, V.V., Tolmachev, A.I., Ilchenko, A.Ya., Sokolov, N.I., Zahaykevich, G.

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Особливості аналізу фінансової діяльності акціонерного товариства von Єропутова, О.О.

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Diffusion model of defect formation in silicon under light ion implantation von Voznyy, M.V., Gorley, P.M., Schenderovskyy, V.A.

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Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation von Haccart, T., Cattan, E., Remiens, D.

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Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys von Olikh, Y.M., Savkina, R.K., Vlasenko, O.I.

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III-V material solar cells for space application von Torchynska, T.V., Polupan, G.P.

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Dispersion of natural modes in a many-layer planar system von Goncharenko, A.V., Snopok, B.A., Shirshov, Yu.M., Venger, E.F., Zavadskii, S.N.

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Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon von Gorban, A.P., Sachenko, A.V., Kostylyov, V.P., Prima, N.A.

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Physical mechanism of temperature oscillations in ferroelectric ceramics conduction von Lepikh, Ya.I.

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Photoinduced structural changes in As₁₀₀₋xSx layers von Stronski, A., Vlcek, M., Sklenar, A.

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Silicon carbide LED von Vlaskina, S.I.

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Study of supercapacitors with a double electrical layer based on activated carbon materials von Budzulyak, I.M., Kovalyuk, Z.D., Motsnyi, F.V., Orletskyi, V.B.

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Зарубіжний досвід організації фінансового менеджменту на підприємстві von Мамченко, Є.Ю., Козина, Л.В.

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Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals von Dubovik, M.F., Tolmachev, A.V., Grinyov, B.V., Grin, L.A., Dolzhenkova, E.F., Dobrotvorskaya, M.V.

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Melt instabilities on semiconductor surfaces induced by laser radiation von Bonchik, A.Yu., Dacko, B.J., Demchuk, V.I., Kiyak, S.G., Palyvoda, I.P., Shnyr, A.F.

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