Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films by Nesterenko, B.O., Kazantseva, Z.I., Stadnyk, O.A., De Rossi, D., Kalchenko, V.I.

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Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well by Korovin, A.V.

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Activation of porous Si blue emission due to preanodization ion implantation by Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.

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Требования к авторам

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Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes by Vlasenko, N.A., Kononets, Ya.F., Denisova, Z.L., Kopytko, Yu.V., Veligura, L.I., Soininen, El., Tornqvist, R.O., Vasama, K.M.

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Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters by Snopok, B.A., Kostyukevich, K.V., Lysenko, S.I., Lytvyn, P.M., Lytvyn, O.S., Mamykin, S.V., Zynyo, S.A., Shepelyavyj, P.E., Kostyukevich, S.A., Shirshov, Yu.M., Venger, E.F.

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Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices by Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

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Structural investigations of annealed ZnS:Cu, Ga film phosphors by Lytvyn, O.S., Khomchenko, V.S., Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Prokopenko, I.V., Rodionov, V.Ye., Tzyrkunov, Yu.A.

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Features of electrical charge transfer in porous silicon by Monastyrskii, L.S.

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Author Index 2009

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Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs by Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.

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Author Index 2010

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Increase of planar homogeneity of multi-silicon structures by gettering treatments by Litovchenko, V.G., Efremov, A.A., Evtukh, A.A., Rassamakin, Yu.V., Klyui, M.I., Kostylov, V.P.

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Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide by Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.

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Short-wave photodetectors based on fine grain-sized poly-Si films by Agaev, F.G.

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Features of conduction electrons motion in the field of coherent light beams by Semchuk, O.Yu., Willander, M., Karlsteen, M.

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Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers by Stronski, A.V.

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X-ray characterization of ZnSe single crystals doped with Mg by Fedorov, A.G., Zagoruiko, Yu.A., Fedorenko, O.A., Kovalenko, N.O.

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Organosilicon luminencent compositions for scintillation detectors by Andryuschenko, L.A., Goriletsky, V.I., Grinyov, B.V., Gavrilyuk, V.P., Zosim, D.I., Skripkina, V.T., Shershykov, V.M.

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GSO: Ce³⁺ scintillator with a high energy resolution by Bondar, V.G., Gavrilyuk, V.P., Konevskii, V.S., Krivonosov, E.V., Martynov, V.P., Savvin, Yu.N.

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