The electric field gradient asymmetry parameter in InSe by Kovalyuk, Z.D., Khandozhko, A.G., Lastivka, G.I., Samila, A.P.

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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

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Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation by Burbelo, R., Isaiev, M., Kuzmich, A.

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Charge transport in bismuth orthogermanate crystals by Bochkova, T.M., Plyaka, S.N.

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Політична комунікація: проблеми структуризації by Ганжуров, Ю.

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Influence of polarization of free-electron system in semiconductor on the position of minimum in plasma light reflection by Severin, V.S.

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Information processing in an optoelectronic display system by Bushma, A.V.

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Influence of Ca²⁺ ions on the habit of KDP crystals by Javidi, S., Enayati, R., Iraj, M., Aliakbari, N.

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Wavelet analysis of Jones-matrix images corresponding to polycrystalline networks of biological crystals in diagnostics of tuberculosis by Zabolotna, N.I., Balanetska, V.O., Telenga, O.Yu., Ushenko, V.O.

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Influence of electron-electron drag on piezoresistance of n-Si by Boiko, I.I.

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Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency by Tripathy, P.R., Mukherjee, M., Pati, S.P.

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Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current by Elgomati, H.A., Ahmad, I., Salehuddin, F., Hamid, F.A., Zaharim, A., Majlis, B.Y., Apte, P.R.

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Singular analysis of Jones-matrix images describing polycrystalline networks of biological crystals in diagnostics of cholelithiasis in its latent period by Balanetska, V.O., Marchuk, Yu., Karachevtsev, A.V., Ushenko, V.O.

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Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules by Dvoynenko, M.M., Kazantseva, Z.I., Strelchuk, V.V., Kolomys, O.F., Bortshagovsky, E.G., Venger, E.F., Tronc, P.

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Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions by Pavlovich, I.I., Tomashik, Z.F., Stratiychuk, I.B., Tomashik, V.M., Savchuk, O.A., Kravtsova, A.S.

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Деякі аспекти формування іміджу політичного лідера by Петракова, Є.

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Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs₄Sb₁₂) by Akinlami, J.O., Awobode, A.M.

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Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs by Rana, A.K., Chand, N., Kapoor, V.

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Electrical properties of MIS structures with silicon nanoclusters by Bunak, S.V., Ilchenko, V.V., Melnik, V.P., Hatsevych, I.M., Romanyuk, B.N., Shkavro, A.G., Tretyak, O.V.

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Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing by Bratus, O.L., Evtukh, A.A., Lytvyn, O.S., Voitovych, M.V., Yukhymchuk, V.О.

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