Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing by Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals by Bogoboyashchiy, V.V.

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Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films by Mamikonova, V.M., Kasimov, F.D., Kemerchev, G.P.

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Investigation of structural perfection of SiC ingots grown by a sublimation method by Avramenko, S.F., Kiselev, V.S., Valakh, M.Ya., Visotski, V.G.

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Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry by Ammerlaan, C.A.J.

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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals by Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

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Економічні та соціальні проблеми розвитку пенсійної системи України (на прикладі м. Києва) by Вернигора, Н.Ф.

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Determination of surface parameters of solids by methods of X-ray total external reflection by Balovsyak, S.V., Fodchuk, I.M., Lytvyn, P.M.

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Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As by Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.

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High-resistance low-doped GaAs and AlGaAs layers obtained by LPE by Krukovsky, S.I., Zayachuk, D.M., Rybak, O.V., Mryhin, I.O.

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Electron emission modulation effects in micro-size structures by Hartnagel, H.

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Electrical activity of misfit dislocations in GaAs-based heterostructures by Wosinski, T.

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Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition by Andriyevsky, B.V., Romanyuk, M.O., Dumka, Yu.A.

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Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide by Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.

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Iodine-stabilized He-Ne laser pumped by transverse rf-discharge by Boyko, O.V., Negriyko, A.M., Yatsenko, L.P.

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Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals by Elizarov, A.I., Kurbanov, K.R., Bogoboyashchyy, V.V.

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Смертність від вбивств в Україні: соціальна нерівність винуватців і жертв злочинів by Левчук, Н.М.

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Characteristics of thermal lens induced in active rod of cw Nd:YAG laser by Khizhnyak, A., Galich, G., Lopiitchouk, M.

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Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material by Zabello, E., Syaber, V., Khizhnyak, A.

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Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique by Serdega, B.K., Venger, Ye.F., Nikitenko, Ye.V.

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