Влияние холодной обработки металла на проводимость наноконтактов платины, меди и серебра by Шкляревский, О.И., Янсон, И.К.

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Игорь Кондратьевич Янсон (1938–2011). К 75-летию со дня рождения by Найдюк, Ю. Г.

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New directions in point-contact spectroscopy based on scanning tunneling microscopy techniques (Review Article) by Tartaglini, E., Verhagen, T.G.A., Galli, F., Trouwborst, M.L., Müller, R., Shiota, T., Aarts, J., van Ruitenbeek, J.M.

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Peculiarities of valence band formation in As-Ge-Se semiconductor glasses by Vakiv, M., Golovchak, R., Chalyy, D., Shpotyuk, M., Ubizskii, S., Shpotyuk, O.

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Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions by Rosul, R.R., Guranich, P.P., Gomonnai, O.O., Slivka, A.G., Rigan, M.Yu., Rubish, V.M., Guranich, O.G., Gomonnai, A.V.

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A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs by Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.

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Wigner function description of a qubit-oscillator system by Allen, J., Zagoskin, A.M.

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Macroscopic quantum tunneling and retrapping processes in moderately damped YBaCuO Josephson junctions by Massarotti, D., Longobardi, L., Galletti, L., Stornaiuolo, D., Rotoli, G., Tafuri, F.

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Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe by Kovalyuk, Z.D., Duplavyy, V.Y., Sydor, O.M.

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Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory by Khotkevych, N.V., Kolesnichenko, Yu.A., van Ruitenbeek, J.M.

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Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S by Borschak, V.A., Brytavskyi, Ie.V., Smyntyna, V.A., Lepikh, Ya.I., Balaban, A.P., Zatovskaya, N.P.

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Cathodic corrosion: Part 1. Mechanism of corrosion via formation of metal anions in aqueous medium by Yanson, Yu.I., Yanson, A.I.

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Cathodic corrosion: Part 2. Properties of nanoparticles synthesized by cathodic corrosion by Yanson, A.I., Yanson, Yu.I.

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Надбарьерное отражение блоховской точки в одноосных ферромагнетиках с сильной магнитной анизотропией... by Шевченко, А.Б., Барабаш, М.Ю.

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Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements by Gomeniuk, Yu.V.

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Experimental and theoretical study of stimulated Raman scattering indicatrix asymmetry by Dmitriev, M.V., Isaienko, O.Iu., Ivanisik, А.І., Korotkov, P.A.

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Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters by Sarikov, A., Naseka, V.

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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films by Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

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Optimal cooling of a driven artificial atom in dissipative environment by Du, Lingjie, Yu, Yang, Lan, D.

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Современные теоретико-методологические проблемы управления развитием трудовых процессов by Быстряков, И.К.

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