Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide by Katerynchuk, V.M., Kudrynskyi, Z.R.

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Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions by Gavrysh, V.I.

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Influence of the dispersion environment nature on photoluminescence properties of CdTe nanocrystals in colloidal solutions by Kapush, O.A., Kalytchuk, S.M., Trishchuk, L.I., Tomashyk, V.M., Tomashyk, Z.F., Kravtsova, A.S., Korbutyak, D.V., Boruk, S.D.

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SERS of Rhodamine 6G on substrates with laterally ordered and random gold nanoislands by Yukhymchuk, V.O., Kostyukevych, S.A., Dzhagan, V.M., Milekhin, A.G., Rodyakina, E.E., Yanchuk, I.B., Shepeliavy, P.Ye., Valakh, M.Ya., Kostyukevych, K.V., Lysiuk, V.O., Tverdokhlib, I.V.

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Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals by Studenyak, I.P., Kranjčec, M., Bilanchuk, V.V., Dziaugys, A., Banys, J., Orliukas, A.F.

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Electrophysical characteristics of large-size αSi-Si(Li) detector heterostructures by Muminov, R.A., Saymbetov, A.K., Toshmurodov, Yo.K.

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The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis by Bacherikov, Yu.Yu., Zhuk, A.G., Optasyuk, S.V., Okhrimenko, O.B., Kardashov, K.D., Kozitskiy, S.V.

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Грошові доходи населення: новітні тенденції рівня та структури by Крищенко, К.Є.

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Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter by Rashid Nizam, S. Mahdi A. Rizvi, Ameer Azam

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Fourier-Stokes polarimetry of fields corresponding to linearly and circularly polarized birefringent protein networks by Karachevtsev, A.O.

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Reflection coefficient and optical conductivity of gallium nitride GaN by Akinlami, J.O., Olateju, I.O.

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Polarization correlometry of nets for characteristic states in Mueller-matrix patterns inherent to phase-inhomogeneous biological layers by Novakovs’ka, O.Yu.

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Complex index of refraction of indium nitride InN by Akinlami, J.O., Bolaji, F.M.

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Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown by Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.

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Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method by Rubish, V.M., Kozusenok, O.V., Shtets, P.P., Marjan, V.M., Gera, E.V., Tarnaj, A.A.

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Photoelectrical properties of nanoporous silicon by Luchenko, A.I., Svezhentsova, K.V., Melnichenko, M.M.

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Nanoprobe spectroscopy of capillary forces and its application for a real surface diagnostics by Efremov, A.A., Lytvyn, P.M., Anishchenko, А.O., Dyachyns’ka, O.M., Aleksyeyeva, T.A., Prokopenko, I.V.

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Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields by Syngaivska, G.I., Korotyeyev, V.V.

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Роль матриксных металлопротеиназ (ммп) при злокачественных новообразованиях. іі. участие ммп в ангиогенезе, инвазии и метастазировании опухолей... by Ганусевич, И.И.

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Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry by Chuiko, G.P., Dvornik, O.V.

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