Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers by Osinniy, V., Dybko, K., Jedrzejczak, A., Arciszewska, M., Dobrowolski, W., Story, T., Radchenko, M.V., Sichkovskiy, V.I., Lashkarev, G.V., Olsthoorn, S.M., Sadowski, J.

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NATO Advanced Research Workshop “Dimensionality effects and non-linearity in ferroics”

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Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals by Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.

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TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment by Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Lytvyn, O.S., Prokopenko, I.V., Ivanov, V.N.

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Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique by Volodin, N.M., Zavyalova, L.V., Kirillov, A.I., Svechnikov, S.V., Prokopenko, I.V., Khanova, A.V.

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Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique by Movchan, S., Sizov, F., Tetyorkin, V.

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Varistor-like current-voltage characteristic of porous silicon by Vakulenko, O.V., Kondratenko, S.V., Shutov, B.M.

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Semiconductor sensors for dosimetry of epithermal neutrons by Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.

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Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix by Khatsevich, I., Melnik, V., Popov, V., Romanyuk, B., Fedulov, V.

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Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon by Hasanov, H.A., Murguzov, M.I.

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Свобода як всезагальний принцип права by Донченко, О.П.

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Raman threshold and optical gain bandwidth in silica fibers by Felinskyi, G.S., Korotkov, P.A.

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The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment by Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.

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Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions by Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.

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Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells by Lokot, L.O.

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Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric by Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.

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Factor of interfacial potential for the surface plasmon-polariton resonance sensor response by Lopatynskyi, A.M., Lopatynska, O.G., Poperenko, L.V., Chegel, V.I., Guiver, M.D.

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Dielectric studies of dispersions of carbon nanotubes in liquid crystal 5CB by Koval'chuk, A., Dolgov, L., Yaroshchuk, O.

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Polar properties and local piezoelectric response of ferroelectric nanotubes by Morozovska, A.N., Svechnikov, G.S., Shiskin, E.I., Shur, V.Y.

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Effect of La³⁺ ions on the habit of KDP crystals by Javidi, S., Esmaeil Nia, Aliakbari, N., Taheri, F.

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