Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing by Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.

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Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride by Ilchuk, G.A.

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Optical properties of thin gold film by Kovalenko, S.A., Fedorovych, R.D.

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Simple waveguide model of arbitrary filled plane-plane cavity by Anokhov, S.

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Comprehensive investigation of defects in highly perfect silicon single crystals by Prokopenko, I.V., Kislovskii, E.N., Olikhovskii, S.I., Tkach, V.M., Lytvyn, P.M., Vladimirova, T.P.

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About the nature of diffusion anisotropy in CdS crystals by Borkovskaya, L.V., Dzhumaev, B.R., Khomenkova, L.Yu., Korsunskaya, N.E., Markevich, I.V., Sheinkman, M.K.

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Thermoelectric properties of solid solutions based on tin telluride by Freik, D.M., Galushchak, M.O., Ivanishin, I.M., Shperun, V.M., Zapukhlyak, R.I., Pyts, M.V.

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Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors by Venger, Ye.F., Kolomoets, V.V., Machulin, V.F.

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Hot wall growth and properties of lead telluride films doped by germanium and gallium by Lashkarev, G.V., Radchenko, M.V., Slynko, E.I., Vodopiyanov, V.N., Asotsky, V.V., Kaminsky, V.M., Beketov, G.V., Rengevich, E.V.

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Paraelectric properties of PbTe doped with Ga by Tetyorkin, V., Movchan, S.

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Recrystallization processes in screen-printed CdS films by Klad’ko, V.P., Lytvyn, O.S., Lytvyn, P.M., Osipenok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F., Korchevoy, A.A.

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Photoluminescent films of nanocrystalline silicon doped with metals by Kaganovich, E.B., Kirillova, S.I., Manoilov, E.G., Primachenko, V.E., Svechnikov, S.V., Venger, E.F., Bazylyuk, I.R.

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Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers by Semenova, G.N., Venger, E.F., Korsunska, N.O., Klad’ko, V.P., Borkovska, L.V., Semtsiv, M.P., Sharibaev, M.B., Kushnirenko, V.I., Sadofyev, Yu.G.

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Optical and magneto-optical properties of thin films for high density information recording by Kravets, V.G., Poperenko, L.V., Yurgelevich, I.V., Petford-Long, A.K.

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Influence of ion implantation and annealing on composition and structure of GaAs surface by Normuradov, M.T., Umirzakov, B.E., Tashmukhamedova, D.A., Tashatov, A.K.

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The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices by Ahmad, I., Omar, A., Mikdad, A.

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The influence of depolarization field on dielectric and pyroelectric properties of ferroelectric films by Glinchuk, M.D., Eliseev, E.A., Stephanovich, V.A.

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Model of dynamic indication in the bar graph form by Bushma, A.V., Sypko, N.I.

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Mechanism of 6H-3C transformation in SiC by Vlaskina, S.I.

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Performance of optical and hybrid joint transform correlators for tasks of optical security by Muravsky, L.I., Kulynych, Ya.P., Maksymenko, O.P., Voronyak, T.I., Pogan, L.Y., Vladimirov, F.L., Kostyukevych, S.A., Fitio, V.M.

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