Substructure and orientation heterogeneity of polycrystalline aluminum and its changes during plastic deformation by Badiyan, E.E., Tonkopryad, A.G., Shekhovtsov, O.V., Shurinov, R.V., Zetova, T.R.

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Substructure and orientation heterogeneity of polycrystalline aluminum and its changes during plastic deformation by Badiyan, E.E., Tonkopryad, A.G., Shekhovtsov, O.V., Shurinov, R.V., Zetova, T.R.

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Exciton absorption spectra of KPb₂Br₅ thin films by Kovalenko, V.V., Kovalenko, E.N., Yunakova, O.N., Yunakov, N.N.

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Influence of external pressure on conductivity of systems based on polyethylene oxide and carbon nanotubes by Lysenkov, E.A., Klepko, V.V.

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Photo- and radioluminescence of poleskiy amber by Mysiura, I., Kalantaryan, O., Kononenko, S., Zhurenko, V., Grigorenko, D., Chishkala, V., Azarenkov, N., Avotin, S., Rohmanov, N.

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Створення судових органів на окупованій території України в роки Другої світової війни by Олійник, Ю.В.

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Experimental study on tribological property of mechanical seals with changeable pore diameter by Ma Chenbo, Duan Yan Jun, Sun Jianjun

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Symmetry of life in crystals by Balonin, N.A., Suzdal, V.S.

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Modified participation ratio approach: application to edge-localized states in carbon nanoclusters by Luzanov, A.V.

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Pecularities of pore relaxation in nanoclusters by Ratner, M.A., Yanovsky, V.V.

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X-ray and photo-excited luminescence of ZnWO₄ nanoparticles with different size and morphology by Tupitsyna, I.A., Maksimchuk, P.O., Yakubovskaya, A.G., Malyukin, Y.V., Zvereva, V.S., Vovk, O.M.

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Time-resolved Ax-luminescence of NaI:Tl under electron pulse irradiation by Yakovlev, V., Trefilova, L., Alekseev, V., Krasnov, V.

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Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) by Parphenyuk, P.V., Evtukh, A.A.

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Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals by Bratus, O.L., Evtukh, A.A., Steblova, O.V., Prokopchuk, V.M.

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Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation by Milenin, G.V., Red’ko, R.A.

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Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals by Pekar, G.S., Singaevsky, А.А., Singaevsky, А.F.

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Інформаційно-видавниче забезпечення функціонування окупаційної влади на Черкащині у 1941-1944 рр. by Мельниченко, В.М.

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Search of mode wavelengths in planar waveguides by using Fourier transform of wave equation by Fitio, V.M., Romakh, V.V., Bobitski, Ya.V.

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Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.

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Features of tensoresistance in single crystals of germanium and silicon with different dopants by Baranskii, P.I., Gaidar, G.P.

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