Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase by Shutov, S.V., Baganov, Ye.A.

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Транспортні відділи НКВС України у боротьбі зі злочинністю на залізничних комунікаціях Донбасу у 1943-1945 рр.... by Шевченко, А.Є.

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films by Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

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Noise induced re-entrant transitions in exciton bistable system by Gudyma, Yu., Ivans'kii, B., Semenko, O.

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Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films by Morozovska, A.N., Eliseev, E.A., Remiens, D., Soyer, C.

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Diamond microcrystallites formation through the phase transition graphite→liquid→diamond by Semikina, T.V.

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Luminescent converter of solar light into electrical energy. Review by Kulish, M.R., Kostylyov, V.P., Sachenko, A.V., Sokolovskyi, I.O., Khomenko, D.V., Shkrebtii, A.I.

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Degradation processes in LED modules by Sorokin, V.M., Kudryk, Ya.Ya., Shynkarenko, V.V., Kudryk, R.Ya., Sai, P.O.

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Transducer based on surface plasmon resonance with thermal modification of metal layer properties by Kostiukevych, K.V.

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Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect by Gorley, P.M., Horley, P.P., Chupyra, S.M.

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Microwave irradiation of gallium arsenide by Red'ko, R.

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Investigation of the effective mass of electrons in solid solutions Hg₁₋x₋y₋zAxByCzTe by Ostapov, S.E., Zhikharevich, V.V., Deibuk, V.G.

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Контрнаступ німецьких військ на Вінниччині (січень 1944 року) by Гальчак, С.Д.

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Photoresponse in Ge/Si nanostructures with quantum dots by Nikolenko, A.S., Kondratenko, S.V., Vakulenko, O.V.

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Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group by Vlasov, A.P., Bonchyk, A.Yu., Fodchuk, I.M., Barcz, A., Swiatek, Z.T., Zaplitnyy, R.A.

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An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications by Houk, Yu., Iniguez, B., Flandre, D., Nazarov, A.

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Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry by Odarych, V.A., Sarsembaeva, A.Z., Vuichyk, M.V., Sizov, F.F.

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New fast-relaxed liquid crystal materials for optical communication networks by Garbovskiy, Yu., Sadovenko, A., Koval'chuk, A., Klimusheva, G., Bugaychuk, S.

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Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials by Denbnovetsky, S.V., Slobodyan, N.V.

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Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes in isotropic solvents by Gorishnyi, M.P., Shevchuk, A.F., Manzhara, V.S., Koval'chuk, A.V., Koval'chuk, T.N.

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