Data for: Correlated electronic structure and local spin in lead-copper-vanadium-bromine apatite: a DMFT study за авторством Sukhenko Ihor

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Cyclotron radiation of semiconductor crystals за авторством Milenin, G.V., Milenin, V.V., Red'ko, R.A.

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Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals за авторством Gaidar, G.P.

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Influence of the mirror image forces on dispersion and phonon acoustic mode width of quasi-Rayleigh wave interacting with the adsorbed atoms за авторством Seneta, M.Ya., Peleshchak, R.M., Brytan, V.B.

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Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) за авторством Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.

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Model research of phonon spectra of argyrodites family за авторством Nebola, I.I., Shteyfan, A.Ya., Sidey, V.I., Katanytsia, A.F., Studenyak, I.P., Shkyrta, I.M.

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Self-organization in irradiated semiconductor crystals caused by thermal annealing за авторством Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.

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The phenomenon of magnetic exchange bias in ferromagnetic nanocomposites grown by electron beam evaporation за авторством Radchenko, M.V., Lashkarev, G.V., Bugaiova, M.E., Baibara, O.E., Knoff, W., Story, T., Krushinskaya, L.A., Stelmakh, Y.A., Dumond, Y.

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Influence of inter-electron scattering on the form of the non-equilibrium distribution function of band carriers за авторством Boiko, I.I.

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Features of electrochemical processes at the boundary p-GaAs-HF water solution за авторством Pashchenko, G.A., Kravetskyi, M.Yu., Trishchuk, L.I.

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Studying the mechanical properties of (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals by using the micro-indentation method за авторством Bilanych, V.V., Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Studenyak, I.P.

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Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface за авторством Tatyanenko, N.P., Roshchina, N.N., Gromashevskii, V.L., Svechnikov, G.S., Zavyalova, L.V., Snopok, B.A.

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Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells за авторством Vinoslavskii, M.M., Belevskii, P.A., Poroshin, V.M., Pilipchuk, O.S., Kochelap, V.O.

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Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments за авторством Savchenko, D.V., Kalabukhova, E.N., Shanina, B.D., Bagraev, N.T., Klyachkin, L.E., Malyarenko, A.M., Khromov, V.S.

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Inversion of spin levels in exchange-coupled pairs under combined time reversal за авторством Geru, I.I.

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Condensons and bicondensons in a one-dimensional systems за авторством Kashirina, N.I., Korol, O.A.

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Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC за авторством Shanina, B.D., Bratus', V.Ya.

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1/f noise and carrier transport mechanisms in InSb p⁺-n junctions за авторством Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I., Trotsenko, S.P.

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Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures за авторством Yurkovych, N.V., Mar'yan, M.I., Seben, V.

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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates за авторством Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.

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