Preparation of quaternary compounds Cu₂ZnSnS₄ by using the self-propagating high-temperature synthesis by Bacherikov, Yu.Yu., Mirzayev, M.N., Zhuk, A.G., Okhrimenko, O.B., Doroshkevich, N.V., Kidalov, V.V., Goroneskul, V.Yu.

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Growth-sector dependence of morphological, structural, and optical features in boron-doped HPHT diamond crystals by Strelchuk, V.V., Nikolenko, A.S., Lytvyn, P.M., Ivakhnenko, S.O., Kovalenko, T.V., Danylenko, I.M., Malyuta, S.V.

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Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon by Ismailov, K.А., Iliev, X.M., Tursunov, M.O., Ismaylov, B.K.

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Non-recombination injection mode by Leyderman, A.Yu., Ayukhanov, R.A., Turmanova, R.M., Uteniyazov, A.K., Esenbaeva, E.S.

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Electrical properties of cation-substituted Ag₇(Si₁₋ₓGeₓ)S₅I single crystals by Studenyak, I.P., Pogodin, A.I., Shender, I.A., Filep, M.J., Kokhan, O.P., Kopčanský, P.

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Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes by Shashikala, B.N., Nagabhushana, B.S.

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Peculiarities of specular infrared reflection spectra of ZnO-based ceramics by Melnichuk, O.V., Korsunska, N.O., Markevich, I.V., Boyko, V.V., Polishchuk, Yu.O., Tsybrii, Z.F., Melnichuk, L.Yu., Venger, Ye.F., Kladko, V.P., Khomenkova, L.Yu.

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Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma by Belfennache, D., Madi, D., Yekhlef, R., Toukal, L., Maouche, N., Akhtar, M.S., Zahra, S.

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Mechanical properties of superionic ceramics based on (Cu₁₋ₓAgₓ)₇GeSe₅I solid solutions by Bilanych, V.S., Babilya, M.I., Korovska, D.M., Studenyak, V.I., Shender, I.O., Pogodin, A.I., Studenyak, I.P., Kranjčec M.

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Phase transition in vanadium oxide films formed by multistep deposition by Kladko, V.P., Melnik, V.P., Liubchenko, О.I., Romanyuk, B.M., Gudymenko, О.Yo., Sabov, Т.M., Dubikovskyi, О.V., Maksimenko, Z.V., Kosulya, О.V., Kulbachynskyi, O.A., Lytvyn, P.M., Efremov, О.O.

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Nanostructured SiC as a promising material for the cold electron emitters by Goriachko, A.M., Strikha, M.V.

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