Cyclotron radiation of semiconductor crystals von Milenin, G.V., Milenin, V.V., Red'ko, R.A.

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Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals von Gaidar, G.P.

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Influence of the mirror image forces on dispersion and phonon acoustic mode width of quasi-Rayleigh wave interacting with the adsorbed atoms von Seneta, M.Ya., Peleshchak, R.M., Brytan, V.B.

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Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) von Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.

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Model research of phonon spectra of argyrodites family von Nebola, I.I., Shteyfan, A.Ya., Sidey, V.I., Katanytsia, A.F., Studenyak, I.P., Shkyrta, I.M.

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Self-organization in irradiated semiconductor crystals caused by thermal annealing von Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.

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The phenomenon of magnetic exchange bias in ferromagnetic nanocomposites grown by electron beam evaporation von Radchenko, M.V., Lashkarev, G.V., Bugaiova, M.E., Baibara, O.E., Knoff, W., Story, T., Krushinskaya, L.A., Stelmakh, Y.A., Dumond, Y.

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Influence of inter-electron scattering on the form of the non-equilibrium distribution function of band carriers von Boiko, I.I.

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Features of electrochemical processes at the boundary p-GaAs-HF water solution von Pashchenko, G.A., Kravetskyi, M.Yu., Trishchuk, L.I.

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Studying the mechanical properties of (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals by using the micro-indentation method von Bilanych, V.V., Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Studenyak, I.P.

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Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface von Tatyanenko, N.P., Roshchina, N.N., Gromashevskii, V.L., Svechnikov, G.S., Zavyalova, L.V., Snopok, B.A.

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Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells von Vinoslavskii, M.M., Belevskii, P.A., Poroshin, V.M., Pilipchuk, O.S., Kochelap, V.O.

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Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments von Savchenko, D.V., Kalabukhova, E.N., Shanina, B.D., Bagraev, N.T., Klyachkin, L.E., Malyarenko, A.M., Khromov, V.S.

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Inversion of spin levels in exchange-coupled pairs under combined time reversal von Geru, I.I.

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Condensons and bicondensons in a one-dimensional systems von Kashirina, N.I., Korol, O.A.

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Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC von Shanina, B.D., Bratus', V.Ya.

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1/f noise and carrier transport mechanisms in InSb p⁺-n junctions von Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I., Trotsenko, S.P.

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Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures von Yurkovych, N.V., Mar'yan, M.I., Seben, V.

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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates von Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.

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Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ von Bletskan, D.I., Frolova, V.V.

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