1/f noise and carrier transport mechanisms in InSb p⁺-n junctions by Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I., Trotsenko, S.P.

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Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures by Yurkovych, N.V., Mar'yan, M.I., Seben, V.

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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates by Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.

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Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ by Bletskan, D.I., Frolova, V.V.

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Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan by Konchits, A.A., Shanina, B.D., Yanchuk, I.B., Krasnovyd, S.V.

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Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields by Syngaivska, G.I., Koroteev, V.V., Kochelap, V.A.

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Mechanical properties of Cu₆PS₅І superionic crystals and thin films by Bilanych, V.V., Bendak, А.V., Skubenych, K.V., Lofaj, F., Studenyak, I.P., Bilanych, V.S., Rizak, V.M.

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Transformation of structural defects in semiconductors under the action of electromagnetic and magnetic fields, causing resonant phenomena by Milenin, G.V., Red'ko, R.A.

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Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes by Romanets, P.M., Konakova, R.V., Boltovets, M.S., Basanets, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.

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Synthesis and characterisation of new potassium-containing argyrodite-type compounds by Studenyak, I.P., Pogodin, A.I., Studenyak, V.I., Kokhan, O.P., Azhniuk, Yu.M., Cserhati, C., Kokenyesi, S., Zahn, D. R.T.

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Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes by Latreche, A.

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Method for data processing in application to ohmic contacts by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kovtonjuk, V.M., Kudryk, Ya.Ya., Shynkarenko, V.V., Dub, M.M., Saj, P.O., Novitskii, S.V.

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The electronic, structural and paramagnetic properties of magnesium telluride by Akinlami, J.O., Omeike, M.O., Akindiilete, A.J.

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Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes by Kudryk, Ya.Ya., Slipokurov, V.S.

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Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure by Sapaev, I.B., Sapaev, B., Babajanov, D.B.

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Preparation and electrical properties of composites based on (Cu₆PS₅I)₁₋ₓ(Cu₇PS₆)ₓ mixed crystals by Izai, V.Yu., Luchynets, M.M., Studenyak, I.P., Pogodin, A.I., Kokhan, O.P., Rajňák, M., Timko, M., Kopčanský, P.

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Taking the Coulomb effects into account in the reactions of one-electron charge exchange by Lazur, V.Yu., Aleksiy, V.V., Karbovanets, М.І., Khoma, M.V., Myhalyna, S.І.

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Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe by Uteniyazov, A.K., Ismailov, K.A.

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Account of surface contribution to the thermodynamic properties of lead selenide films by Nykyruy, L.I., Naidych, B.P., Voznyak, O.M., Parashchuk, T.O., Ilnytskyi, R.V.

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Electronic and optical properties of β-HgS by Akinlami, J.O., Onyeanu, F.C.

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