Результати пошуку - "Semiconductors" :: Harvester open publications of NAS Ukraine

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Semiconductor physics 49
Semiconductor Physics 42
chalcogenide vitreous semiconductors 3
AFM lithography 2
chalcogenide semiconductors 2
nanorelief structures 2
near-field probes 2
semiconductor converter 2
комутуючий дросель 2
полупроводниковый преобразователь 2
халькогенідні напівпровідники 2
537.8 1
621.3 1
621.3.017 1
621.311.1 1
621.313.333.2 1
621.314.1 1
910.4 1
NAS of Ukraine 1
Quantum Effects in Semiconductors and Insulating Materials 1
SEMICONDUCTORS AND DIELECTRICS 1
Volodymyr M. Yakovenko 1
ablation 1
achievements 1
active conductivity 1
adjustable high-order induction motor 1
automatic control system 1
bug 1
chalcogenide vitreous semiconductor 1
commutating choke 1

Influence of inter-electron scattering on the form of the non-equilibrium distribution function of band carriers за авторством Boiko, I.I.

Dynamics of the conductance temperature dependence for a composite based on linear polyethylene with impurity of soot and calcite за авторством Poberezhets, S.I., Kovalchuk, O.V., Savchenko, B.M., Iskandarov, R.Sh., Kovalchuk, T.M., Poberezhets, I.I.

Key parameters of commercial silicon solar cells with rear metallization за авторством Sachenko, A.V., Kostylyov, V.P., Vlasyuk, V.M., Korkishko, R.M., Sokolovskyi, I.O., Chernenko, V.V., Dvernikov, B.F., Serba, O.A., Evstigneev, M.A.

Electronic structure, optical, and photoelectrical properties of crystalline Si₂Te₃ за авторством Bletskan, D.I., Vakulchak, V.V., Studenyak, I.P.

Empirical prediction of thermal properties, microhardness and sound velocity of cubic zinc-blende AlN за авторством Daoud, S.

Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes за авторством Latreche, A.

Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone за авторством Berezhnytska, O.S., Trunova, O.K., Gudyma, А.О., Smirnov, А.B., Okhrimenko, O.B., Bacherikov, Yu.Yu.

Influence of anion substitution on electrical conductivity of composites based on liquid crystal with Cu₆PS₅X (X = I, Br) nanoparticles за авторством Studenyak, I.P., Kovalchuk, O.V., Poberezhets, S.I., Timko, M., Kopcansky, P.

Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena за авторством Milenin, G.V., Redko, R.A.

Sensory features of thiacalix[4]arene molecules towards volatile halogen-aromatic compounds за авторством Kazantseva, Z.I., Koshets, I.A., Zaharenko, O.M., Kharchenko, S.G., Kalchenko, V.I.

Influence of cation substitution on the mechanical properties of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base за авторством Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Kranjcec, M., Studenyak, I.P.

Effective minority carrier lifetime in double-sided macroporous silicon за авторством Onyshchenko, V.F., Karachevtseva, L.A.

Doping the thin films by using the original Close Space Sublimation method за авторством Khomchenko, V.S., Sopinskyy, M.V., Dan'ko, V.A., Olkhovik, G.P.

Dielectric properties of nematic liquid crystal with impurities of supramolecular Ni-TMTAA-TCNQ complexes за авторством Vovk, V.E., Kovalchuk, O.V., Kopčanský, P., Kovalchuk, T.M.

Effect of different parameters on the carrier mobility in NWTFET за авторством Marki, R., Zaabat, M.

Rotation of a thin heated plate caused by its own coherent thermal radiation за авторством Pipa, V.I., Liptuga, A.I.

Temperature dependence of dielectric properties of the liquid crystal 6CB with the embedded Ag₇GeS₅I nanoparticles за авторством Poberezhets, S.I., Kovalchuk, O.V., Studenyak, I.P., Kovalchuk, T.M., Poberezhets, I.I., Lacková, V., Timko, M., Kopčanský, P.

Four-particle formalism of the CDW method in two-electron charge-exchange reactions за авторством Lazur, V.Yu., Aleksiy, V.V., Myhalyna, S.I., Hnatic, M.

Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field за авторством Redko, R.A., Milenin, G.V., Milenin, V.V., Redko, S.M.

Результати пошуку - "Semiconductors"

Influence of inter-electron scattering on the form of the non-equilibrium distribution function of band carriers за авторством Boiko, I.I.

Dynamics of the conductance temperature dependence for a composite based on linear polyethylene with impurity of soot and calcite за авторством Poberezhets, S.I., Kovalchuk, O.V., Savchenko, B.M., Iskandarov, R.Sh., Kovalchuk, T.M., Poberezhets, I.I.

Key parameters of commercial silicon solar cells with rear metallization за авторством Sachenko, A.V., Kostylyov, V.P., Vlasyuk, V.M., Korkishko, R.M., Sokolovskyi, I.O., Chernenko, V.V., Dvernikov, B.F., Serba, O.A., Evstigneev, M.A.

Electronic structure, optical, and photoelectrical properties of crystalline Si₂Te₃ за авторством Bletskan, D.I., Vakulchak, V.V., Studenyak, I.P.

Empirical prediction of thermal properties, microhardness and sound velocity of cubic zinc-blende AlN за авторством Daoud, S.

Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes за авторством Latreche, A.

Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone за авторством Berezhnytska, O.S., Trunova, O.K., Gudyma, А.О., Smirnov, А.B., Okhrimenko, O.B., Bacherikov, Yu.Yu.

Influence of anion substitution on electrical conductivity of composites based on liquid crystal with Cu₆PS₅X (X = I, Br) nanoparticles за авторством Studenyak, I.P., Kovalchuk, O.V., Poberezhets, S.I., Timko, M., Kopcansky, P.

Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena за авторством Milenin, G.V., Redko, R.A.

Sensory features of thiacalix[4]arene molecules towards volatile halogen-aromatic compounds за авторством Kazantseva, Z.I., Koshets, I.A., Zaharenko, O.M., Kharchenko, S.G., Kalchenko, V.I.

Influence of cation substitution on the mechanical properties of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base за авторством Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Kranjcec, M., Studenyak, I.P.

Effective minority carrier lifetime in double-sided macroporous silicon за авторством Onyshchenko, V.F., Karachevtseva, L.A.

Doping the thin films by using the original Close Space Sublimation method за авторством Khomchenko, V.S., Sopinskyy, M.V., Dan'ko, V.A., Olkhovik, G.P.

Dielectric properties of nematic liquid crystal with impurities of supramolecular Ni-TMTAA-TCNQ complexes за авторством Vovk, V.E., Kovalchuk, O.V., Kopčanský, P., Kovalchuk, T.M.

Effect of different parameters on the carrier mobility in NWTFET за авторством Marki, R., Zaabat, M.

Rotation of a thin heated plate caused by its own coherent thermal radiation за авторством Pipa, V.I., Liptuga, A.I.

Temperature dependence of dielectric properties of the liquid crystal 6CB with the embedded Ag₇GeS₅I nanoparticles за авторством Poberezhets, S.I., Kovalchuk, O.V., Studenyak, I.P., Kovalchuk, T.M., Poberezhets, I.I., Lacková, V., Timko, M., Kopčanský, P.

Four-particle formalism of the CDW method in two-electron charge-exchange reactions за авторством Lazur, V.Yu., Aleksiy, V.V., Myhalyna, S.I., Hnatic, M.

Changes in impurity radiative recombination and surface morphology induced by the treatment of GaP in a weak magnetic field за авторством Redko, R.A., Milenin, G.V., Milenin, V.V., Redko, S.M.

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