Determination of crystallization conditions of Ge/GaAs heterostructures in the scanning LPE method von Tsybulenko, V.V., Shutov, S.V., Yerochin, S.Yu.

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Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity von Leyderman, A.Yu., Uteniyazov, A.K., Nsanbaev, M.T.

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Energy of interaction between polarons and spatial configuration of bipolaron in two-dimensional systems von Kashirina, N.I., Kashyrina, Ya.O., Korol, O.A., Roik, O.S.

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Studying the properties of Gd₂O₃–WO₃–CaO–SiO₂–B₂O₃ glasses doped with Tb³⁺ von Nawarut Jarucha, Nuanthip Wantana, Thanapong Sareein, Jakrapong Kaewkhao

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Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes von Latreche, A.

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Study of structural, electrical, and optical properties of MoRe₀.₀₀₁Se₁.₉₉₉ single crystal von Vora, A.M.

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Structural and impedance studies of copper-enriched (Cu₀.₇₅Ag₀.₂₅)₇SiS₅I-based ceramics von Studenyak, I.P., Pogodin, A.I., Shender, I.A., Bereznyuk, S.M., Filep, M.J., Kokhan, O.P., Kopčanský, P.

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Comparative characteristics of TiO₂(Er₂O₃, Dy₂O₃)/por-SiC/SiC heterostructures (Review) von Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B.

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Features of the dielectric properties of medical thermal indicators based on dispersions of cholesteric liquid crystals in the polymer matrix von Kovalchuk, O.V., Kotovskyi, V.Yo., Ovcharek, V.E., Oleinikova, I.V., Kovalchuk, T.M.

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Model phonon spectra of Cu₇SiS₅I and Ag₇SiS₅I crystals von Nebola, I.I., Katanytsia, A.F., Shteyfan, A.Ya., Shkyrta, I.M., Studenyak, I.P., Timko, M., Kopčanský, P.

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Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon von Bakhadyrkhanov, M.K., Ismaylov, B.K., Tachilin, S.A., Ismailov, K.A., Zikrillaev, N.F.

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Elastic properties of CdTe₁₋ₓSeₓ (x = 1/16) solid solution: First principles study von Ilchuk, H.A., Korbutyak, D.V., Kashuba, A.I., Andriyevsky, B., Kupchak, I.M., Petrus, R.Yu., Semkiv, I.V.

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Characterization of nano-bio silicon carbide von Vlaskina, S.I., Mishinova, G.N., Shaginyan, I.L., Smertenko, P.S., Svechnikov, G.S.

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Features of current transport in Al–Al₂O₃–-CdTe–Mo structure von Uteniyazov, A.K., Leyderman, A.Yu., Ayukhanov, R.A., Esenbaeva, E.S., Gafurova, M.V.

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Influence of the near-surface regions of the space charge in semiconductor crystals on defect transformation stimulated by the action of magnetic fields von Milenin, G.V., Redko, R.A.

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Kinetic equation having the integral scattering term with a linear form of external electrical and magnetic fields von Boiko, I.I.

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Crystal structure and electrical properties of Ag₆PS₅I single crystal von Studenyak, I.P., Pogodin, A.I., Filep, M.J., Kokhan, O.P., Symkanych, O.I., Timko, M., Kopčanský, P.

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Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon von Saparniyazova, Z.M., Ismailov, K.A., Uteniyazov, A.K., Kamalov, Kh.U.

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Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime von Latreche, A.

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New possibilities for phase-variation structural diagnostics of multiparametrical monocrystalline systems with defects von Molodkin, V.B., Storizhko, V.Yu., Kladko, V.P., Lizunov, V.V., Nizkova, A.I., Gudymenko, O.Yo., Olikhovskii, S.I., Tolmachev, M.G., Dmitriev, S.V., Demchyk, I.I., Bogdanov, E.I., Hinko, B.I.

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