Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals за авторством Zhirko, Yu.I., Zharkov, I.P.

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Design and testing of iodine cells for metrological laser application за авторством Negriyko, A.M., Boyko, O.V., Kachalova, N.M., Khodakovskiy, V.M., Klochko, O.I.

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Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds за авторством Manam, J., Sharma, S.K.

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Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell за авторством Hashim, U., Ayub, R.M., On, K.S.

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RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures за авторством Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.

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Polymeric compositions having near IR photoconduction за авторством Davidenko, N.A., Kuvshinsky, N.G., Melenevsky, D.A., Derevyanko, N.A., Ishchenko, A.A., Kulinich, A.V., Neilands, O., Plotniece, M.

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Self-organized nanostructured anodic oxides for display applications за авторством Jaguiro, P., Stsiapanau, A., Hubarevich, A., Mukha, Y., Smirnov, A.

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TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment за авторством Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Lytvyn, O.S., Prokopenko, I.V., Ivanov, V.N.

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Partial polarization switching in ferroelectrics-semiconductors with charged defects за авторством Morozovska, A.N., Eliseev, E.A., Cattan, E., Remiens, D.

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Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers за авторством Stronski, A.V.

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GSO: Ce³⁺ scintillator with a high energy resolution за авторством Bondar, V.G., Gavrilyuk, V.P., Konevskii, V.S., Krivonosov, E.V., Martynov, V.P., Savvin, Yu.N.

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Atomic and electronic structure of a-SiC за авторством Ivashchenko, V.I., Shevchenko, V.I.

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Physical properties of ZnSe-MgSe, ZnSe-CdS solid solutions and possibilities of their application in IR engineering за авторством Zagoruiko, Yu.A., Fedorenko, O.A., Kovalenko, N.O., Rom, M.A., Mateychenko, P.V.

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Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines за авторством Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals за авторством Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.

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The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices за авторством Ahmad, I., Omar, A., Mikdad, A.

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Digital aroma technology for chemical sensing: temporal chemical images of complex mixtures за авторством Kruglenko, I.V., Snopok, B.A., Shirshov, Y.M., Venger, E.F.

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Advanced modification of main types of excimer laser resonators за авторством Baschenko, S.M.

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Polarization properties and a local structure of (GeSe₂)x(Sb2Se₃)₁-x glasses за авторством Malesh, V.I., Rubish, V.V., Shpak, I.I., Rubish, V.M., Puha, P.P.

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Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures за авторством Melezhik, E.O., Sizov, F.F., Mikhailov, N.N., Gumenjuk-Sichevska, J.V.

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