Radiation-induced optical darkening and oxidation effects in As₂S₃ glass by Kavetskyy, T.S.

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Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions by Studenyak, I.P., Neimet, Yu.Yu., Rati, Y.Y., Buchuk, M.Yu., Kökényesi, S., Daróci, L., Bohdan, R.

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Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films by Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.

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Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy by Morozovska, A.N.

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Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) by Parphenyuk, P.V., Evtukh, A.A.

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Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S by Borschak, V.A., Brytavskyi, Ie.V., Smyntyna, V.A., Lepikh, Ya.I., Balaban, A.P., Zatovskaya, N.P.

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Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor by Vlasov, S.I., Saparov, F.A., Ismailov, K.A.

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Synthesis of highly doped Nd:YAG powder by the SOL-GEL method by Hajiesmaeilbaigi, F., Farmahini, M. F., Hasani, J.B.

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Fourier-Stokes polarimetry of fields corresponding to linearly and circularly polarized birefringent protein networks by Karachevtsev, A.O.

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Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.

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Luminescence of the pyrazoline dye in nanostructured zeolite matriх by Beliak, I.V., Kravets, V.G., Kryuchin, A.A.

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SERS of dye film deposited onto gold nano-clusters by Grytsenko, K., Kolomzarov, Yu., Lytvyn, O., Doroshenko, T., Strelchuk, V.

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Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K by Ermakov, V.M., Kolomoets, V.V., Panasyuk, L.I., Nazarchuk, P.F., Yashchynskiy, L.V.

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Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass by Mateleshko, N., Mitsa, V., Stronski, A., Veres, M., Koos, M., Andriesh, A.M.

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The structure of glassy HgS–GeS₂ by Halyan, V.V., Davydyuk, H.Ye., Parasyuk, O.V., Kevshyn, A.H.

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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors by Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.

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Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge by Gaidar, G.P.

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Template-based growth of TiO₂ nanorods by sol-gel process by Sadeghzadeh-Attar, A., Sasani Ghamsari, M., Hajiesmaeilbaigi, F., Mirdamadi, Sh.

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Optical properties of diamond-like carbon films subjected to ultraviolet irradiation by Klyui, N.I., Litovchenko, V.G., Lukyanov, A.N., Klyui, A.N.

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Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals by Ostapov, S.E., Rarenko, I.M., Tymochko, M.D.

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