Thermodynamical length scales temperatures correlation for the Ginzburg-Landau theory von Bousnane, Z., Merabtine, N., Benslama, M., Bousaad, F.

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Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions von Tetyorkin, V.V., Sukach, A.V., Tkachuk, A.I., Movchan, S.P.

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Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN von Sheremet, V.N.

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Raman spectroscopy of the laser irradiated titanium dioxide von Strelchuk, V.V, Budzulyak, S.I., Budzulyak, I.M, Ilnytsyy, R.V., Kotsyubynskyy, V.O., Segin, M.Ya., Yablon, L.S.

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Photoluminescence studies of CdTe polycrystalline films von Tetyorkin, V.V., Sukach, A.V., Stariy, S.V., Boiko, V.A.

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Features of the development of LED spotlight for local illumination of extended objects von Kudrautsau, K.A., Kernazhytski, Y.V., Tsvirka, V.I., Trofimov, Yu.V., Posedko, V.S., Posedko, A.S.

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Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing von Smyntyna, V.A., Sviridova, O.V.

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Saturation of optical absorption in CdS single crystals von Malysh, N. I., Kunets, V. P., Valiukh, S. I., Kunets, Vas. P.

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Dissolution of indium arsenide in nitric solutions of the hydrobromic acid von Tomashik, Z.F., Danylenko, S.G., Tomashik, V.N.

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Silicon-on-insulator technology for microelectromechanical applications von Usenko, A.Y., Carr, W.N.

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Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry von Ammerlaan, C.A.J.

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Determination of surface parameters of solids by methods of X-ray total external reflection von Balovsyak, S.V., Fodchuk, I.M., Lytvyn, P.M.

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Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As von Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.

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High-resistance low-doped GaAs and AlGaAs layers obtained by LPE von Krukovsky, S.I., Zayachuk, D.M., Rybak, O.V., Mryhin, I.O.

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Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material von Zabello, E., Syaber, V., Khizhnyak, A.

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Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique von Serdega, B.K., Venger, Ye.F., Nikitenko, Ye.V.

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An arithmetic logic unit of a computer based on single electron transport system von Biswas, A.K., Sarkar, S.K.

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Dielectric response of disordered ferroelectrics with embedded charged clusters von Morozovska, A.N., Eliseev, E.A., Obukhovsky, V.V.

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Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations von Pyziak, L., Obermayr, W., Zembrowska, K., Kuzma, M.

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Photovoltage and photocurrent spectroscopy of luminescent porous silicon von Vakulenko, O.V., Kondratenko, S.V.

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