A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs by Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.

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Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms by Kondryuk, D.V., Kramar, V.M., Kroitor, O.P.

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Електричні та фотоелектричні властивості гібридних структур на основі поруватого кремнію і оксиду цинку... by Оленич, І.Б.

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Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses by Kavetskyy, T.S.

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On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ by Borovoy, N., Gololobov, Yu., Isaienko, G., Salnik, A.

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Reflection coefficient and optical conductivity of gallium nitride GaN by Akinlami, J.O., Olateju, I.O.

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Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> by Gaidar, G.P.

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Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers by Red’ko, R., Red’ko, S.

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p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy by Sapaev, B., Saidov, A.S., Sapaev, I.B.

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On the discovery of magnon sidebands in insulating antiferromagnets by White, R.M., Yen, W.M.

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Electroluminescent properties of Tb-doped carbon-enriched silicon oxide by Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.

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Optical properties of ion implanted thin Ni films on lithium niobate by Lysiuk, V.O., Staschuk, V.S., Androsyuk, I.G., Moskalenko, N.L.

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On Raman spectra of water, its structure and dependence on temperature by Baschenko, S.M., Marchenko, I.S.

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Temperature changes of the exciton transition energy in lead di-iodide nanofilms by Pugantseva, O.V., Kramar, V.M., Fesiv, I.V., Kudryavtsev, O.O.

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High-pole LED lighting system by Trofimov, Y.V., Lishik, S.I., Dolgushin, V.V., Kernazhytski, Y.V.

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Low-temperature deposition of silicon dioxide films in high-density plasma by Yasunas, A., Kotov, D., Shiripov, V., Radzionay, U.

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Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells by Gudenko1, Yu.M., Vainberg, V.V., Poroshin, V.M., Tulupenko, V.M.

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High-temperature configurations of dimers in Si (001) surface layers by Kiv, A.E., Maksymova, T.I., Moiseenko, N.V., Soloviev, V.N.

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Electron emission modulation effects in micro-size structures by Hartnagel, H.

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Electric and dielectric properties of glasses of Cu-Sb-S-I system by Rubish, V.M.

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