X-ray characterization of ZnSe single crystals doped with Mg von Fedorov, A.G., Zagoruiko, Yu.A., Fedorenko, O.A., Kovalenko, N.O.

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Influence of neutron irradiation on elctrooptical and structural properties of silicon von Groza, A.A., Venger, E.F., Varnina, V.I., Holiney, R.Yu., Litovchenko, P.G., Matveeva, L.A., Litovchenko, A.P., Sugakov, V.I., Shmatko, G.G.

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Influence of structural defects on photoconductivity of zinc diphosphide von Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.

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Characterization of «solar» multicrystalline silicon by local measurements von Popov, V.G.

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Singular peculiarities of a plane wave diffracted on half-plane von Anokhov, S., Khizhnyak, A., Lymarenko, R., Soskin, M.

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Influence of phonon dispersion on exciton damping in ionic crystals von Grigorchuk, N.I.

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The impact of laser shock waves on anodic oxide - compound semiconductor interface von Yakovyna, V.S., Berchenko, N.N., Nikiforov, Yu.N.

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Electrooptical properties of liquid crystal n-pentil-n´-cyanobifenil with J-aggregates of astrofloxine von Piryatinski, Yu.P., Furier, M.S., Nazarenko, V.G.

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Properties and application of ultrasonic Lamb waves in CdxHg₁₋xTe plates von Lysiuk, I.O., Machulin, V.F., Olikh, Ja.M.

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Investigation of the photoelastic effect in si at high values of the absorptivity von Boiko, I.I., Venger, Ye.F., Nikitenko, E.V., Serdega, B.K.

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Thin films of organic molecular crystals (OMC) possessing type B lattice: spatial structure of dibenzotetraazaannulene film is related to its thickness von Snopok, B.A., Lampeka, Ya.D.

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Generalized model of holographic recording in photopolymer materials von Karpov, H.M., Obukhovsky, V.V., Smirnova, T.N.

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Conversion efficiency in silicon solar cells with spatially non-uniform doping von Sachenko, A.V., Prima, N.A., Gorban, A.P.

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Influence of superlattice produced by coherent light beams on the optical properties of ferromagnetic semiconductors von Semchuk, O.Yu., Gozhenko, V.V.

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Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon von Neimash, V.B., Puzenko, O.O., Kraitchinskii, A.M., Krasko, M.M., Putselyk, S., Claeys, C., Simoen, E.

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Ultrasound effect on radiation damages in boron implanted silicon von Romanjuk, B., Krüger, D., Melnik, V., Popov, V., Olikh, Ya., Soroka, V., Oberemok, O.

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Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals von Virt, I.S., Gorbunov, V.V.

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Advanced scintillation single crystals based on complex oxides with large atomic number von Burachas, S.F., Nagornaya, L.L., Onishchenko, G.M., Piven, L.A., Pirogov, E.N., Ryzhikov, V.D.

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Allowable deviation of LC layer thickness in cholesteric LCDs von Rybalochka, A., Sorokin, V., Sorokin, A.

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Diffusion model of defect formation in silicon under light ion implantation von Voznyy, M.V., Gorley, P.M., Schenderovskyy, V.A.

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