Theory of the free-carrier absorption in quantum wires with boundary roughness scattering за авторством Ibragimov, G.B.

Отримати повний текст

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes за авторством Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.

Отримати повний текст

Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds за авторством Korsunskaya, N. E., Markevich, I. V., Dzhumaev, B. R., Borkovskaya, L. V., Sheinkman, M. K.

Отримати повний текст

Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals за авторством Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

Отримати повний текст

Evolution of defective structure of the irradiated silicon during natural ageing за авторством Fodchuk, I.M., Gutsulyak, T.G., Himchynsky, O.G., Olijnich-Lysjuk, A.V., Raransky, N.D.

Отримати повний текст

Ultrasound influence on exciton emission of GaP light diodes за авторством Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.

Отримати повний текст

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors за авторством Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.

Отримати повний текст

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment за авторством Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.

Отримати повний текст

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures за авторством Abdizhaliev, S.K., Ismailov, K.A., Kamalov, A.B., Kudrik, Ya.Ya.

Отримати повний текст

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices за авторством Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

Отримати повний текст

Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots за авторством Kunets, V.P., Kulish, N.R., Lisitsa, M.P., Bryksa, V.P.

Отримати повний текст

Regularities of visible photoluminescence creation in low-dimensional silicon structures за авторством Manoilov, E.G.

Отримати повний текст

Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface за авторством Dorogan, V.G., Zhydkov, V.O., Motsnyi, F.V., Smolanka, O.M.

Отримати повний текст

Approximation of electro-optical characteristics of ChLC at transitions from the homeotropic texture за авторством Rybalochka, A., Chumachkova, M., Sorokin, V.

Отримати повний текст

Modeling high performance multilayer antireflection coatings for visible and infrared (3-5μm) substrates за авторством Asghar, M.H., Khan, M.B., Naseem, S.

Отримати повний текст

Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells за авторством Fodchuk, I.M., Gevyk, V.B., Gimchinsky, O.G., Kislovskii, E.N., Kroytor, O.P., Molodkin, V.B., Olihovskii, S.I., Pavelescu, E.M., Pessa, M.

Отримати повний текст

Structure and luminescence study of nanoporous silicon layers with high internal surface за авторством Makara, V.A., Melnichenko, M.M., Svezhentsova, K.V., Khomenkova, L.Yu., Shmyryeva, O.M.

Отримати повний текст

Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ за авторством Kondrat, O., Popovich, N., Dovgoshej, N.

Отримати повний текст

Individual glow bands of Mn²⁺ ions photoluminescence in plastically deformed ZnS single crystals за авторством Prokofiev, T.A., Kovalenko, A.V., Polezaev, B.A., Bulanyi, M.F., Gorban, A.A., Hmelenko, O.V.

Отримати повний текст

Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures за авторством Vlasenko, N.A., Purwins, H.-G., Denisova, Z.L., Kononets, Ya.F., Niedernostheide, F.-J., Veligura, L.I., Zuccaro, S.

Отримати повний текст