RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures by Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.

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Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects by Masselink, W.T., Kissel, H., Mueller, U., Walther, C., Mazur, Yu.I., Tarasov, G.G ., Rudko, G.Yu., Valakh, M.Ya., Malyarchuk, V., Zhuchenko, Z.Ya.

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Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation by Milenin, G.V., Red’ko, R.A.

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p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy by Sapaev, B., Saidov, A.S., Sapaev, I.B.

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Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments by Milenin, G.V., Red’ko, R.A.

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Взаимодействие неоднородных упругих волн с двумерными электронами в гетероструктурах AlGaAs-GaAs-AlGaAs by Филь, Д.В.

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Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation by Peleshchak, R.M., Kuzyk, O.V., Dan'kiv, O.O.

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The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation by Peleshchak, R.M., Kuzyk, O.V., Dan'kiv, O.O., Guba, S.K.

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Gothie et Crimee de 750 a 830 dans les sources ecclesiastiques et monastiques grecques by Auzepy M.-F.

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Вплив внутрішніх механічних напружень і квантово-розмірного ефекту на ефективність сульфідної електронної пасивації GaAs... by Венгер, Є.Ф., Матвеєва, Л.О., Колядіна, О.Ю., Клименко, А.П.

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Влияние междолинного переноса электронов на эффективность генерации диодов с туннельными границами на основе GaAs... by Прохоров, Э.Д., Боцула, О.В., Клименко, О.А.

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Влияние режимов ионного легирования и фотонного отжига на параметры имплантированных слоев n-GaAs:Si by Бончик, А.Ю., Ижнин, И.И., Кияк, С.Г., Савицкий, Г.В.

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Влияние режимов ионного легирования и фотонного отжига на параметры имплантированных слоев n-GaAs:Si by Bonchyk, A. Yu., Izhnin, I. I., Kyjak, S. G., Savytsky, G. V.

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|Review| Benfoughal T. Les palmes du savoir-faire : la vannerie dans les oasis du Sahara by H. Kabakova

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Hans Koch – soldier, secret service agent, scientist, "eerily normal person" by I. S. Monolatii

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Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments by G. V. Milenin, R. A. Redko

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Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation by G. V. Milenin, R. A. Redko

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Research of operating peculiarities of the system "main fans - ventilation network" in coal mines by T. V. Bunko, Sh. Zhalilov, I. E. Kokoulin

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Interaction between two elastic bodies in the presence of periodically arranged interface gaps filled with a real gas by O. P. Kozachok, B. S. Slobodian, R. M. Martyniak

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Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs by D. V. Kondryuk, A. V. Derevyanchuk, V. M. Kramar, A. A. Kudryavtsev

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