New method for estimating the refractive index of optical materials in spectrally selective elements von Manko, A.A., Svechnikov, G.S.

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Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice von Abouelaoualim, D.

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Миколаївщина в перші місяці Великої Вітчизняної війни (червень-серпень 1941 р.) von Котляр, Ю.В.

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Precise measurements of the wavelength in KrCl laser spectral region (222 nm) von Zubrilin, N.G., Pavlov, I.A., Baschenko, S.M., Tkachenko, O.M.

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Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis von Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.

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Optical studies of as-deposited and annealed Cu₇GeS₅I thin films von Studenyak, I.P., Bendak, A.V., Rybak, S.O., Izai, V.Yu., Kúš, P., Mikula, M.

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Structural properties of chalcogenide glasses As₂Se₃ doped with manganese von Paiuk, O.P., Revutska, L.O., Stronski, A.V., Gudymenko, A.Yo., Stanchu, H.V., Gubanova, A.A., Kryskov, Ts.A.

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LC acousto-optical transducer for nondestructive holographic control systems von Oleksenko, P., Sorokin, V., Zelinskyy, R., Tytarenko, P.

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Dielectric spectroscopy of CuInSe₂ single crystals von Mustafaeva, S.N., Asadov, S.M., Guseinov, D.T., Kasimoglu, I.

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Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field von Kazantseva, Z., Kislyuk, V., Kozyarevych, I., Lozovski, V., Tretyak, O.

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Одеський університет в 1941-1945 рр. von Самойлов, О.Ф.

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Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method von Gentsar, P.A., Vlasenko, A.I., Kudryavtsev, A.A.

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Analysis of fractal radiation patterns from concentric-ring hexagonal arrays von Boualleg, A., Merabtine, N., Benslama, M.

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Polymorphism in chalcogenides of alkalineearth metals von Drozdov, V.А., Pozhivatenko, V.V., Drozdov, М.А., Kovalchuk, V.V., Moiseev, L.M., Moiseeva, V.O.

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New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis von Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.

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Optical properties of p-type porous GaAs von Kidalov, V.V., Beji, L., Sukach, G.A.

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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage von Osinsky, V.I., Masol, I.V., Feldman, I.Kh., Diagilev, A.V., Sukhovii, N.O.

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Possible mechanism of inhibition of virus infectivity with nanoparticles von Khylko, O.L., Rusinchuk, N.M.

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Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase von Shutov, S.V., Baganov, Ye.A.

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Транспортні відділи НКВС України у боротьбі зі злочинністю на залізничних комунікаціях Донбасу у 1943-1945 рр.... von Шевченко, А.Є.

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