Radiative recombination in initial and electron-irradiated GaP crystals by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

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Феномени “опозиційної ідеології“ та “ідеології опозиційності“ by Лага, В.

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Electron-hole Fermi liquid in nanosized semiconductor structures by Litovchenko, V.G., Grygoriev, A.A.

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Ultrasonic assisted nanomanipulations with atomic force microscope by Lytvyn, P.M., Olikh, O.Ya., Lytvyn, O.S., Dyachyns’ka, O.M., Prokopenko, I.V.

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Photoluminescent properties of crystalline solid solution Zn₁₋ xMgxSe:Cr²⁺, a new active material for tunable IR lasers by Kovalenko, N.O., Zagoruiko, Yu.A., Fedorenko, O.O., Kuzminov, E.A.

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Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties by Bilozertseva, V.I., Khlyap, H.M., Shkumbatyuk, P.S., Dyakonenko, N.L., Mamaluy, A.O., Gaman, D.O.

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Determination of surface defects by using the wavefront scanner by Goloborodko, N.S., Grygoruk, V.I., Kurashov, V.N., Podanchuk, D.V., Goloborodko, A.A., Kotov, M.M.

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Optical transmittance of carbon suspensions in polymer matrixes under powerful pulsed laser irradiation by Zelensky, S.E., Kopyshinsky, O.V., Garashchenko, V.V., Kolesnik, A.S., Stadnytskyi, V.M., Zelenska, K.S., Shynkarenko, Ye .V.

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Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing by Smyntyna, V.A., Sviridova, O.V.

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Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures by Veleschuk, V.P., Lyashenko, O.V., Vlasenko, Z.K., Kysselyuk, M.P.

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Method and estimation of parameters of dense part of double electrical layer at the interface electrode-solution of the dye in liquid crystal by Kovalchuk, O.V.

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Polarization conversion effect in obliquely deposited SiOx films by Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

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Нова чи оновлена концепція прав етнонаціональних меншин? by Картунов, О.

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Optical properties of the Ti surface structured by femtosecond laser beam by Dolgov, L., Kravchuk, R., Rybak, A., Kiisk, V., Sildos, I., Blonskyi, I.

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Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals by Studenyak, I.P., Izai, V.Yu., Stephanovich, V.О., Panko, V.V., Kúš, P., Plecenik, A., Zahoran, M., Greguš, J., Roch, T.

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Sensors for fire gas detectors by Kozubovsky, V.R., Kormosh, V.V., Alyakshev, I.P., Lishchenko, N.H.

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Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals by Studenyak, I.P., Izai, V.Yu., Stephanovich, V.О., Panko, V.V., Kúš, P., Plecenik, A., Zahoran, M., Greguš, J., Roch, T.

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Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure by Steblenko, L.P., Koplak, O.V., Syvorotka, I.I., Kravchenko, V.S.

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Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism by Vlasenko, N.A., Oleksenko, P.F., Mukhlyo, M.O., Lytvyn, P.M., Veligura, L.I., Denisova, Z.L.

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Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge by Gaidar, G.P.

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