ENDOR study of irradiated tooth enamel by Ishchenko, S., Vorona, I., Okulov, S.

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Silicon-on-insulator technology for microelectromechanical applications by Usenko, A.Y., Carr, W.N.

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Radiation hardness of AlAs/GaAs-based resonant tunneling diodes by Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.

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IR sensor readout devices with source input circuits by Sizov, F.F., Reva, V.P., Derkach, Yu.P., Kononenko, Yu.G., Golenkov, A.G., Korinets, S.V., Darchuk, S.D., Filenko, D.A.

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Страховий захист індивідуума у процесі рекреації by Охріменко, О.О.

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Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication by Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.

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Resistance thermometers based on the germanium films by Mitin, V.F.

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Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds by Korsunskaya, N. E., Markevich, I. V., Dzhumaev, B. R., Borkovskaya, L. V., Sheinkman, M. K.

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Electro-physical properties of γ-exposed crystals of silicon and germanium by Dotsenko, Yu. P.

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Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing by Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.

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Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals by Bogoboyashchiy, V.V.

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Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films by Mamikonova, V.M., Kasimov, F.D., Kemerchev, G.P.

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Investigation of structural perfection of SiC ingots grown by a sublimation method by Avramenko, S.F., Kiselev, V.S., Valakh, M.Ya., Visotski, V.G.

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Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry by Ammerlaan, C.A.J.

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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals by Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

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Економічні та соціальні проблеми розвитку пенсійної системи України (на прикладі м. Києва) by Вернигора, Н.Ф.

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Determination of surface parameters of solids by methods of X-ray total external reflection by Balovsyak, S.V., Fodchuk, I.M., Lytvyn, P.M.

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Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As by Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.

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High-resistance low-doped GaAs and AlGaAs layers obtained by LPE by Krukovsky, S.I., Zayachuk, D.M., Rybak, O.V., Mryhin, I.O.

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Electron emission modulation effects in micro-size structures by Hartnagel, H.

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