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26981

Структура, фазовые переходы и тепловое расширение этана С₂Н₆ by Клименко, Н.А., Гальцов, Н.Н., Прохватилов, А.И.

Published in Физика низких температур (2008)

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Article

26982

Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base by Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Karimova, D.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

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Article

26983

Трансформации криовакуумных конденсатов этанола в окрестностях температуры стеклования by Дробышев, А., Алдияров, А., Катпаева, К., Коршиков, Е., Курносов, В., Соколов, Д.

Published in Физика низких температур (2013)

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26984

Магнитное состояние манганитного нанокомпаунда La₀,₈Mn₁,₀₄O₃,₅ by Сиренко, В.А., Рыкова, А.И., Еременко, А.В.

Published in Физика низких температур (2013)

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Article

26985

Розвиток системи соціального страхування у контексті сучасних тенденцій народжуваності by Ткаченко, Л.Г.

Published 2010

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26986

Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26987

Photoluminescent properties of Al₂O₃ films containing gold nanoparticles, which are prepared by pulse laser deposition by Kaganovich, E.B., Kizyak, I.M., Kudryavtsev, A.A., Manoilov, E.G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26988

Influence of initial defects on defect formation process in ion doped silicon by Smyntyna, V.A., Sviridova, O.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26989

Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations by Morozovska, A.N., Svechnikov, G.S., Shishkin, E.I., Shur, V.Y.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26990

Adaptive cross-correlation detector for signals of optoelectronic reflective sensors by Bilyy, O.I., Yaremyk, R.Y., Kostyukevych, S.O., Kostyukevych, K.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26991

Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions by Denysyuk, R.O., Tomashik, V.M., Tomashik, Z.F., Chernyuk, O.S., Grytsiv, V.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26992

Новое в критерии разделения тонких сверхпроводящих пленок на узкие и широкие by Дмитриев, В.М., Золочевский, И.В., Безуглый, Е.В.

Published in Физика низких температур (2008)

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Article

26993

The features of surface plasmon resonance in gold cluster films by Maksimenko, L.S., Matyash, I.E., Rudenko, S.P., Serdega, B.K.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26994

Electrophysical properties of SmxPb₁₋xTe solid solutions by Hasanov, H.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26995

Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system by Halyan, V.V., Shevchuk, M.V., Davydyuk, G.Ye., Voronyuk, S.V., Kevshyn, A.H., Bulatetsky, V.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26996

Рождаемость в Молдове: современное состояние и перспективы by Гагауз, О.Е.

Published 2010

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Article

26997

Reliability of AC thick-film electroluminescent lamps by Vlaskin, V., Vlaskina, S., Berezhinsky, L., Svechnikov, G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26998

Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures by Makhniy, V.P., Skrypnyk, N.V., Boyko, Yu.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

26999

Properties of phase-shifting devices used in researches of nonlinear absorption by Kulish, M.R., Malysh, N.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

27000

Hydrogenic impurity in a bilayer spherical quantum dot by Boichuk, V.I., Bilynskyi, I.V., Leshko, R.Ya.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Article

Search Results

Структура, фазовые переходы и тепловое расширение этана С₂Н₆ by Клименко, Н.А., Гальцов, Н.Н., Прохватилов, А.И.

Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base by Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Karimova, D.A.

Магнитное состояние манганитного нанокомпаунда La₀,₈Mn₁,₀₄O₃,₅ by Сиренко, В.А., Рыкова, А.И., Еременко, А.В.

Розвиток системи соціального страхування у контексті сучасних тенденцій народжуваності by Ткаченко, Л.Г.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

Photoluminescent properties of Al₂O₃ films containing gold nanoparticles, which are prepared by pulse laser deposition by Kaganovich, E.B., Kizyak, I.M., Kudryavtsev, A.A., Manoilov, E.G.

Influence of initial defects on defect formation process in ion doped silicon by Smyntyna, V.A., Sviridova, O.V.

Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations by Morozovska, A.N., Svechnikov, G.S., Shishkin, E.I., Shur, V.Y.

Adaptive cross-correlation detector for signals of optoelectronic reflective sensors by Bilyy, O.I., Yaremyk, R.Y., Kostyukevych, S.O., Kostyukevych, K.V.

Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions by Denysyuk, R.O., Tomashik, V.M., Tomashik, Z.F., Chernyuk, O.S., Grytsiv, V.I.

Новое в критерии разделения тонких сверхпроводящих пленок на узкие и широкие by Дмитриев, В.М., Золочевский, И.В., Безуглый, Е.В.

The features of surface plasmon resonance in gold cluster films by Maksimenko, L.S., Matyash, I.E., Rudenko, S.P., Serdega, B.K.

Electrophysical properties of SmxPb₁₋xTe solid solutions by Hasanov, H.A.

Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂&lt;=>AgGaS₂+GeSe₂ system by Halyan, V.V., Shevchuk, M.V., Davydyuk, G.Ye., Voronyuk, S.V., Kevshyn, A.H., Bulatetsky, V.V.

Рождаемость в Молдове: современное состояние и перспективы by Гагауз, О.Е.

Reliability of AC thick-film electroluminescent lamps by Vlaskin, V., Vlaskina, S., Berezhinsky, L., Svechnikov, G.

Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures by Makhniy, V.P., Skrypnyk, N.V., Boyko, Yu.N.

Properties of phase-shifting devices used in researches of nonlinear absorption by Kulish, M.R., Malysh, N.I.

Hydrogenic impurity in a bilayer spherical quantum dot by Boichuk, V.I., Bilynskyi, I.V., Leshko, R.Ya.

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Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system by Halyan, V.V., Shevchuk, M.V., Davydyuk, G.Ye., Voronyuk, S.V., Kevshyn, A.H., Bulatetsky, V.V.