Solid-state laser with self-stabilized or linearly chirped output frequency by Lopiitchouk, M., Peshko, I.

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Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures by Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

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Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures by Savchyn, V.P., Stakhira, J.M., Fiyala, Ya.M., Furtak, V.B.

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Effect of nonuniform doping profile on thermometric performance of diode temperature sensors by Sokolov, V.N., Shwarts, Yu.M.

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Lattice of superconducting multilayer nanotubes as ideal high-temperature superconductor by Pokropivny, V.V., Makarov, I. M., Pokropivny, A.V.

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Thermostable power sensors for transmitted continuous radiation of CO- and CO₂- lasers by Zagoruiko, Yu.A., Kovalenko, N.O., Fedorenko, O.A.

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Simulation of low angle X-ray diffraction on multilayers subjected to diffusion by Fedorov, A.G.

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New ideas in electrodynamics: physical properties of time by Oleinik, V.P., Borimsky, Yu.C., Arepjev, Yu.D.

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Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions by Starchyk, M.I., Marchenko, L.S., Pinkovska, M.B., Shmatko, G.G., Varnina, V.I.

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Quantum-chemistry calculation of BnNn-rings (n = 1-6) and fulborenes, the fullerene-like molecules BnNn (n = 12, 24, 60) by Sheichenko, D.M., Pokropivny, A.V., Pokropivny, V.V.

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Звітує Інститут загальної та неорганічної хімії ім. В.І. Вернадського

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Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells by Melezhik, E.O., Gumenjuk-Sichevsk, J.V., Sizov, F.F.

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Polarization properties of the luminescence from silicon nanocrystals by Diener, J., Kovalev, D., Polisski, G., Koch, F.

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Color mixing models for smart lighting systems based on RGBW and WW LEDs by Kornaga, V.I., Sorokin, V.M., Rybalochka, A.V., Oliinyk, O.S., Kornaga, N.P.

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Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis by Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V.

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Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.

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The influence of non-uniform deformation on photoelectric properties of crystalline silicon by Vakulenko, O.V., Kondratenko, S.V.

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Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix by Azhniuk, Yu.M., Gomonnai, A.V., Gomonnai, O.O., Hasynets, S.M., Kováč, F., Lopushansky, V.V., Petryshynets, I., Rubish, V.M., Zahn, D.R.T.

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Piezoelectrically active acoustic waves confined in a quantum well and their amplification by electron drift by Demidenko, A.A., Kochelap, V.A., Venger, E.F.

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Ohmic contacts based on Pd to indium phosphide Gunn diodes by Belyaev, A.E., Boltovets, N.S., Bobyl, A.V., Zorenko, A.V., Arsentiev, I.N., Kladko, V.P., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.

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