Харвестер відкритої науки НАН України

Radiation-induced pocesses in A²B⁶ oxide compounds under proton and gamma-irradiation

von Starzhinskiy, N.G., Ryzhikov, V.D., Gal’chinetskii, L.P., Nagornaya, L.L., Silin, V.I.
Veröffentlicht in Вопросы атомной науки и техники (2005)

Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

von Atroshchenko, L.V., Galkin, S.N., Galchinetskii, L.P., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Doping methods and properties of the solid solutions on AIᴵᴵBⱽᴵ crystals base

von Atroshchenko, L.V., Gal'chinetskii, L.P., Galkin, S.N., Katrunov, K.A., Lalayants, A.I., Lisetskaya, E.K., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G., Voronkin, E.F.
Veröffentlicht in Functional Materials (2005)