New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures von V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov

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Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown von A. B. Aleinikov, V. A. Berezovets, V. L. Borblik, M. M. Shwarts, Yu. M. Shwarts

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