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Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

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Bibliographic Details
Main Authors: A. B. Aleinikov, V. A. Berezovets, V. L. Borblik, M. M. Shwarts, Yu. M. Shwarts
Format: Article
Language:English
Published: 2012
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000350259
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http://jnas.nbuv.gov.ua/article/UJRN-0000350259

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