Electrical properties of MIS structures with silicon nanoclusters von S. V. Bunak, V. V. Ilchenko, V. P. Melnik, I. M. Hatsevych, B. N. Romanyuk, A. G. Shkavro, O. V. Tretyak

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Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 von S. V. Bunak, A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, A. G. Shkavro

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