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Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X&lt;2

Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X&lt;2

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Bibliographic Details
Main Authors: S. V. Bunak, A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, A. G. Shkavro
Format: Article
Language:English
Published: 2010
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000349118
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http://jnas.nbuv.gov.ua/article/UJRN-0000349118

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