X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates von N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin

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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures von V. P. Kladko, A. V. Kuchuk, N. V. Safryuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios von V. P. Kladko, N. V. Safriuk, H. V. Stanchu, A. V. Kuchuk, V. P. Melnyk, A. S. Oberemok, S. B. Kriviy, Z. V. Maksymenko, A. E. Belyaev, B. S. Yavich

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The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts von A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin

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Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo

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