X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates by N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin

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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures by V. P. Kladko, A. V. Kuchuk, N. V. Safryuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios by V. P. Kladko, N. V. Safriuk, H. V. Stanchu, A. V. Kuchuk, V. P. Melnyk, A. S. Oberemok, S. B. Kriviy, Z. V. Maksymenko, A. E. Belyaev, B. S. Yavich

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The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts by A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin

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Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density by A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts by A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo

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