2025-02-22T01:17:08-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-90765%22&qt=morelikethis&rows=5
2025-02-22T01:17:08-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-90765%22&qt=morelikethis&rows=5
2025-02-22T01:17:08-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T01:17:08-05:00 DEBUG: Deserialized SOLR response
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density

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Bibliographic Details
Main Authors: A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet
Format: Article
Language:English
Published: 2012
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000350390
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Internet

http://jnas.nbuv.gov.ua/article/UJRN-0000350390

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