The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating von Agueev, O.A., Svetlichny, A.M.

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Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating von Agueev, O.A., Svetlichnyi, A.M.

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Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing von Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.

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Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing von Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.

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Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters von Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

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