SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118115
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.

Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an inter...