The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating за авторством Agueev, O.A., Svetlichny, A.M.

Отримати повний текст

Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating за авторством Agueev, O.A., Svetlichnyi, A.M.

Отримати повний текст

Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing за авторством Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.

Отримати повний текст

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters за авторством Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.

Отримати повний текст

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

Отримати повний текст