The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices

за авторством Ahmad, I., Omar, A., Mikdad, A.
Опубліковано 2002

Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current

за авторством Elgomati, H.A., Ahmad, I., Salehuddin, F., Hamid, F.A., Zaharim, A., Majlis, B.Y., Apte, P.R.
Опубліковано 2011