The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices by Ahmad, I., Omar, A., Mikdad, A.

Get full text

Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current by Elgomati, H.A., Ahmad, I., Salehuddin, F., Hamid, F.A., Zaharim, A., Majlis, B.Y., Apte, P.R.

Get full text