Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

за авторством Baranskii, P.I., Gaidar, G.P.
Опубліковано 2012

Features of tensoresistance in single crystals of germanium and silicon with different dopants

за авторством Baranskii, P.I., Gaidar, G.P.
Опубліковано 2016

Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

за авторством Baranskii, P.I., Babich, V.M., Venger, E.F.
Опубліковано 2001

The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

за авторством Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Опубліковано 2000

Mass-spectrometric investigations of gas evolution

за авторством Asnis, Yu.A., Baranskii, P.I., Babich, V.M., Zabolotin, S.P., Ptushinskii, Yu.G., Sukretnyi, V.G.
Опубліковано 2006