Mass-spectrometric investigations of gas evolution

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Asnis, Yu.A., Baranskii, P.I., Babich, V.M., Zabolotin, S.P., Ptushinskii, Yu.G., Sukretnyi, V.G.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121441
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Mass-spectrometric investigations of gas evolution / Yu.A. Asnis, P.I. Baranskii, V.M. Babich, S.P. Zabolotin, Yu.G. Ptushinskii, V.G. Sukretnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 4-7. — Бібліогр.: 6 назв. — англ.

Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, o...