Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity за авторством Baranskii, P.I., Gaidar, G.P.

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Features of tensoresistance in single crystals of germanium and silicon with different dopants за авторством Baranskii, P.I., Gaidar, G.P.

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Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals за авторством Gaidar, G.P., Baranskii, P.I.

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Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors за авторством Baranskii, P.I., Babich, V.M., Venger, E.F.

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Mass-spectrometric investigations of gas evolution за авторством Asnis, Yu.A., Baranskii, P.I., Babich, V.M., Zabolotin, S.P., Ptushinskii, Yu.G., Sukretnyi, V.G.

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