Diffusion and following isothermal desorption of impurity and matrix atoms out of sapphire and its melt von Katrich, N.P., Budnikov, A.T., Krivonogov, S.I., Miroshnikov, Yu.P.

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Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization von Grin, L.A., Budnikov, A.T., Sidelnikova, N.S., Adonkin, G.T., Baranov, V.V.

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Structure perfection of sapphire single crystals grown by HOC method in reducing atmosphere von Tkachenko, V.F., Lukienko, O.A., Budnikov, A.T., Vovk, E.A., Krivonogov, S.I.

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Thermochemical etching of sapphire in CO+H₂ gas atmosphere von Kaltaev, Kh.Sh.-ogly, Sidelnikova, N.S., Dan`ko, A.Ya., Budnikov, A.T., Nizhankovsky, S.V.

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Structure perfection of bulk and near-surface layers in sapphire single crystals von Tkachenko, V.F., Puzikov, V.M., Dan`ko, A.Ya., Budnikov, A.T., Lukienko, O.A.

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Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire von Vovk, E.A., Budnikov, A.T., Nizhankovskyi, S.V., Kryvonogov, S.I., Krukhmalev, A.A., Dobrotvorskaya, M.V.

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XRD studies of surface layers in sapphire substrates of <101Bar2> crystalloghaphic orientation von Tkachenko, V.F., Lukienko, O.A., Budnikov, A.T., Vovk, E.A., Krivonogov, S.I., Dan`ko, A.Ya.

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Study of nature of some defects visible in polarized light in sapphire signle crystals von Tkachenko, V.F., Dan`ko, A.Ya., Puzikov, V.M., Budnikov, A.T., Lukienko, O.A., Sidelnikova, N.S., Adonkin, G.T.

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