Харвестер відкритої науки НАН України

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

за авторством Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Ultra-high field transport in GaN-based heterostructures

за авторством Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)