Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions за авторством Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.

Отримати повний текст

Ultra-high field transport in GaN-based heterostructures за авторством Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.

Отримати повний текст